In this paper, a class E power Amplifier (PA) suitable for wireless applications (Wi-Max, cellular phones,
cordless phones etc,) is proposed by using the device of RF3931GaN HEMT (Gallium Nitrate High Electron Mobility
Transistor).The proposed class E power Amplifier for achieving high output power and increasing gain up to 14.327dB
and operates in the frequency range of 1GHz. The designed Power Added Efficiency (PAE) is 64% after optimization and
the maximum source power achieved is 32dBw.