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arXiv:1505.03936vl [cond-mat.mtrl-sci] 15 May 2015 

Combined Fast Reversible Liquid-like Elastic Deformation with Topological Phase Transition in 

Na 3 Bi 

Xiyue Cheng, 1 Ronghan Li, 1 Dianzhong Li, 1 Yiyi Li, 1 and Xing-Qiu Chen' ll 

1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, 

Chinese Academy of Science, 110016 Shenyang, Liaoning, China 
(Dated: May 18, 2015) 

By means of first-principles calculations, we identified the structural phase transition of Na 3 Bi from hexag¬ 
onal ground state to cubic cF 16 phase above 0.8 GPa, in agreement with the experimental findings. Upon the 
releasing of pressure, cF 16 phase of Na 3 Bi is mechanically stable at ambient condition. The calculations re¬ 
vealed that the cF 16 phase is topological semimetal, in similarity to well-known HgTe and it even exhibits an 
unusually low C' modulus (only about 1.9 GPa) and a huge anisotropy, A" of as high as 11, the third highest 
value among all known cubic crystals in their elastic behaviors. These facts render cF16-type Na 3 Bi very soft 
with a liquid-like elastic deformation in the (110)< 110> slip system. Importantly, as accompanied with this 
deformation, Na 3 Bi shows a topological phase transition from a topological semimetal state at its strain-free 
cubic phase to a topological insulating state at its distorted phase. Because the C' elastic deformation almost 
costs no energy in a reversible and liquid-like soft manner, cF16-type Na 3 Bi would potentially provide a fast 
on/off switching way between topological insulator and topological semimetal, which would be beneficial to the 
quantum electronic devices for practical applications. 

PACS numbers: 71.70.Ej, 73.20.At, 62.20.Dc 

The topological material have been extensively studied 
and its number and types have increased dramatically over 
the past decades. As the first member of the topolog¬ 
ical family, the topological insulators (TIs) are materials 
with a bulk band gap but have protected metallic states on 
their edge/surface, originating from the combination of spin- 
orbit interactions and time-reversal symmetry (l]-0, includ¬ 
ing Bi 2 Se 3 0, 0 and the topological crystalline insulators 
(TCIs) such as Pbi_ A Sn A Te(Se), SnSe, and SnS|)6|-0. In an- 
glogy to TIs, the non-trivial topology of the band structure in 
semimetal gives rise to other new states of matters, topologi¬ 
cal Dirac semimetals (TDSs) and topological Weyl semimet¬ 
als (TWSs). For both TDSs and TWSs, the bulk conduction 
and valence bands touch only at discrete (Dirac) points and 
disperse linearly along all momentum directions, while their 
low-energy bulk excitations are described by the Dirac and 
Weyl equations, respectively. Compared to Dirac semimetal. 

inversion or time reversal symmetry must be broken in Weyl 
semimetal. For example, Na 3 Bi|i4H and Cd 3 As 2 0G0 

were theoretically and experimentally demonstrated to be 3D 
TDSs protected by crystal symmetry and the noncentrosym- 
metric materials including TaAs, TaP, NbAs, and NbP jig] 
was recently predicted as natural TWSs. Certainly, the topo¬ 
logical concept can be also introduced into metals leading to 
topological metals (TMs). Generally, most of TMs can be 
manually achieved from TIs or semimetals, yet so far several 
compounds, such as HgTe IB 01 and NaBi 10 1. were found 
to be a native 3D TM. Although the flourishing topological 
material has inspired great interest, one has to admit the fact 
that some existed challenges are restricting its development, 
no matter from the aspects of scientific researches or techno¬ 
logical application. 

Besides two often facing challenges (small band gap and 
small quantized conductance of the edge state) 0000, 

another main challenge is the lacking of effective ways 0 
to control the phase transition between topological materials 
and regular insulators or metals. Traditionally, the control of 
topological phase transitions was realized mainly by pressure, 
lattice strain, or chemical substitution. For instance, hP%- 
type Na 3 Bi undergoes a topological phase transition from a 
Dirac semimental to a trivial insulator upon doping Sb or P 
through varying the concentrations of Na 3 Bii_ A (Sb,P) A 0. 
However, via such a way it is extremely difficult to make the 
transition reversible once the material is fabricated. But, is 
there any way to rapidly and effectively switch on or off these 
phase transitions, rather than traditional means? This defi¬ 
nitely poses a challenging issue. 

As advanced functional materials, the elastic or mechani¬ 
cal properties of topological materials were often neglected 
and concealed under their wonderful and shining electronic 
properties. It is true that a vast majority of topological ma¬ 
terials only have ordinary elastic or mechanical properties 
which may just indicate the structural mechanical stability 
1 2211 . Thus, it would be highly interesting to find a topologi¬ 
cal material with extinct elastic or mechanical properties. Re¬ 
cently, Na 3 Bi was proposed and demonstrated to be a 3D TDS 
I9l 4l2ll , and it is found that Na 3 Bi would undergo a structural 
phase transition of from its hexagonal ground state (lrP24) to a 
cubic cFl6 phase at 0.8 G Pa 12311 , in well agreement with the 
experimental findings 12442611. To one’s surprise, this cF 16- 
Na 3 Bi exhibits an unusually low C' modulus (only about 1.9 
GPa) and a huge anisotropy. A" of as high as 11, the third high¬ 
est value among all known cubic crystals in its elastic prop¬ 
erties. These facts render cFl 6-type Na 3 Bi very soft with a 
liquid-like elastic deformation in the (110)< 110> slip system. 
Meanwhile, as the C' elastic deformation induced a topologi¬ 
cal phase transition from TS to TI and it almost cost no energy 
in a reversible and liquid-like elastic manner, this cubic Na 3 Bi 


(a) hP 8 


O Na2 
O Na 1 
• Bi 



kh a 

60 120 160 200 
Piassura (GPa) 

FIG. 1: (Color online) The DFT-derived pressure-dependent phase transitions of NajBi. (a) hP8 hexagonal phase, which was experimentally 
claimed to be stable at the ground state under ambient pressure, (b) hP24 hexagonal phase, which was theoretically found to be stable at the 
ground state under ambient pressure, (c) cF\6 cubic phase, which is more stable in energy above 0.8 GPa than both /?P8 and liP24 phases, and 
(d) oC16 orthorhombic phase, which is more stable above 118 GPa. (f,g,h,i) the derived phonon dispersions of hP8 (0 GPa), hP24 (0 GPa), 
cF 16 (0 GPa) and oC 16 (120 GPa), respectively, (e and j) the pressure-dependent enthalpies of hP 8, hP24, cF 16 and oC 16 phases to show 
the pressures of phase transitions. The red circles represent the Bi atoms while the Na atoms are shown in different color according to their 
Wyckoff sites. Here, yellow, blue and green circles represents Nal, Na2 and Na3 atoms, respectively. 

phase would potentially provide a fast on/ofF switching way 
between TI and TS. 

The structural optimization, electronic properties and elas¬ 
tic behaviors of the Na 3 Bi phases were calculated within the 
framework of density functional theory (DFT) 0 Bj using 
the Vienna ab initio Simulation Package (VASPl fe W with 
the projector augmented wave (PAW) method 113111 and gen¬ 
eralized gradient approximation (GGA) within the Perdew- 
Burke-Ernzerhof (PBE) exchange-correlation functional 13211 . 
The cutoff energy for the expansion of the wavefunction into 
plane waves was set at 350 eV and the tetrahedron method 
with Blochl corrections was ultilized. All the Brillouin zone 
integrations were performed on Monkhorst-Pack k-meshes 
and was sampled with a resolution of 2 7r x 0.07 A -1 , which 
showed excellent convergence of the energy differences and 
stress tensors. For hexagonal structures, the Brillouin zone 
integrations were performed on the T-centered symmetry. To 
check the dynamical stability, we further derived the phonon 
dispersion curves using the finite-displacement approach as 
implemented in the Phonopy code [33fl- The phonon frequen¬ 
cies are constructed from forces, resulting from displacements 
of certain atoms in a supercell containing typically 80-100 
atoms for each Na 3 Bi phases, respectively. The electronic lo¬ 
calized function (ELF) 1341 - 136 1 was done using the grid-based 
algorithm with 100 x 100 x 100 grids. In addition, all crys¬ 
tal structures and ELF diagrams were generated using VESTA 

The latest discoveries that native Na 3 Bi is a three dimen¬ 
sional (3D) Dirac semimetal represent a significant advance 
in topological Dirac materials lM-ll ill, because this material 
enables the study of a new type of quantum state. At ambi¬ 
ent condition, Na 3 Bi possesses bulk Dirac fermions in 3D at 

the Fermi level, which disperse linearly along all three mo¬ 
mentum directions [liiL lTTll . in contrast to the two-dimensional 
Dirac fermions present on the surfaces of 3D topological in¬ 
sulators and in graphene |381. 

Recently, the first-principles calculations revealed that the 
previously experimentally characterized /zP8 phase (Fig. m 
is unstable at the ground state due to the presence of a negative 
phonon branch around the high-symmetry X point, as illus¬ 
trated in Fig. |T}f). Instead, the calculation suggested that the 
real ground-state phase would be the lrP24 phase (Fig. [Q b)), 
which is indeed a distorted superlattice version of the /zP8 
phase 0. Importantly, this stable hP24 structure exhibits 
a semblable 3D TDS feature as what the /zP8 phase presents 

Furthermore, the previous experiments demonstrated that 
Na 3 Bi undergoes a phase transition above the pressures of 
0.7-1.0 GPal24-26ll. In nice agreement with the experimental 
measurements, our first-principles calculations successfully 
reproduced this phase transition from the ground-state liP24 
(or /zP8) phase to the cubic cFl6 phase (Fig. [He)) above 0.8 
GPa [231], as shown in Fig. 0e). The calculations demon¬ 
strated that, even upon the releasing pressure, the cF 16 phase 
is still mechanically and dynamically stable at zero pressure, 
as elucidated by its phonon dispersions (Fig. |T]h)). This fact 
indicates that the cF 16-type phase is quenchable at ambient 
condition once it is synthesized above 0.8 GPa. Specifically, 
this cubic Na 3 Bi crystalizes in a BiF 3 -type structure (space 
group of Fm3m) with a- 7.550 A at ambient zero pressure. 
The Bi atoms lie at 4 b site (0.5, 0.5, 0.5) and the Na atoms 
occupy two inequivalent sites, 4 a (0, 0, 0) and 8c (3/4, 3/4, 
3/4). The calculation also revealed that, by further increasing 
the pressure up to above 118 GPa, the cubic cF 16 phase can 


be transformed into an orthorhombic 0 CI 6 phase (Fig. Ed) 
and Fig. Ej)X which is a wide-gap insulator 11231. 

Surprisingly, this cubic cF 16 phase exhibits several unusual 
elastic behaviors in its mechanical properties. At 0 GPa, the 
DFT-derived single crystal elastic constants are C n = 22.3 
GPa, C \2 = 18.4 GPa and C 44 =21.9 GPa. Firstly, Cn is 
very close to C 44 , which gives nearly coinciding longitudinal 
and transverse acoustic phonons along the direction of < 001 >. 
This fact is reflected well by that two phonon branches along 
this I -X direction (Fig. Eh)) are nearly degenerated at small 
q values close to the F point. Secondly, it has been noted 
that the difference of C 44 -C 12 is only about 3.5 GPa, reveal¬ 
ing a very small deviation from the Cauchy relation with C 44 
= C 12 , which measures the importance of the angular depen¬ 
dence in atomic forces as compared to the central force de¬ 
scription. Thirdly, cFlb-NaiBi has an rather low C' = r " 3 Cl ’ 
= 1.9 GPa. Note that C' represents the resistance to shear 
deformation by a shear stress applied across the ( 110 ) plane 
in the < 110 > direction and it indeed measures the rigidity 
against the volume-conserving tetragonal deformation. We 
further derived its universal anisotropic ratio to be as high as 
A u = 11.07, according to the recentl y pr oposed definition of 
the universal elastic anisotropy index [39], highlighting a huge 
anisotropy in its elastic properties. Furthermore, we plot the 
C' versus A 1 ' for a variety of cubic crystals (330 compounds, 
elastic data from the supplementary table of ref. 140]) as il¬ 
lustrated in Fig. E a and b). Among those compounds, we 
have observed from the plot that the cubic Na 3 Bi almost ex¬ 
hibits the lowest C' value and the third highest anisotropic 
ratio A" (which are only lower than two known superelastic 
compounds of CuZn and CuAuZn->) lf4l[ El . These unique 
features render cFlb-Na^Bi special: it is very soft, showing a 
liquid-like behaviour along the C' deformation corresponding 
to the shear slip ( 110 )< 110 > system within the elastic regime. 
This fact has also been evidenced by Fig. E C X from which 
it can be seen that the C' deformation almost costs no en¬ 
ergy, based on the deformation energy-versus-strain relation. 
In particular, it has been also found that, the C' and universal 
anisotropic ratio A u show unusual trends with increasing pres¬ 
sure, as evidenced in Fig. Ed)- In the first range below 1 GPa, 
both C' and A 1 ' remain almost constant and, in the pressure 
range from 1 GPa to 4 GPa C' rapidly increases from 2 GPa 
to 6 GPa whereas A“ shows an apparent drop from about 11 
to 6 . Above about 4 GPa, they again almost become constant. 
In particular, the liquid-like and soft elastic behavior of Na 3 Bi 
remains robust in a certain pressure range at least from 0 GPa 
to 1 GPa. 

Importantly, the huge anisotropic ratio of rFI 6 -type Na 3 Bi 
has been further reflected by the stereographic projections 
at ambient pressure in Fig. E a an d c), which are used in 
order to show the particular crystal orientation and the cor¬ 
responding Young’s and shear moduli more clearly, while 
the 3D representation surfaces (Fig. Eb and d)) visualized 
the crystallographic-orientation dependent Young’s and shear 
moduli which, however, presents the strong and weak direc¬ 
tions in one crystal structure directly [[43;]. Note that the neg¬ 




U diamond , . 







_□ Zener anisotropy, A CuZn 

0 Universal anisotropy, A u 


J 10 

a Na s Bi 





EL * CuAuZn 2 

0 ^ Na 3 Bi CuZn \ 

, 0 « « 1 0 , ^1 , 0- 



nun 1 r( 1 1 1 1 1 1 

0 5 10 15 20 

Universal anisotropy, A u 

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 

Chung anisotropy, A c 

FIG. 2: (Color online) The liquid-like elastic behavior of Na 3 Bi. (a) 
C' versus universal anisotropic ratio A", showing that Na 3 Bi has an 
extremely low C' and a highly large A“ among a variety of cubic 
crystals, (b) anisotropic ratio A (A“) versus Chung anisotropy A c for 
a variety of cubic crystals, (c) the DFT-derived deformation energy 
as a functional of strain according to the definition of elastic energies 
of bulk modulus, C 44 , and C' at 0 GPa, (d) the pressure-dependent 
universal anisotropic ratio A “ and C'. 

ative sign only denotes the negative direction corresponding 
to the positive one. In its stereographic projections, each blue 
point denotes one crystal orientation and the lines with differ¬ 
ent colour and density represent the counter lines of Young’s 
or shear moduli. It can be seen that the elastic properties un¬ 
der different crystal orientations highly vary from each other. 
For Young’s modulus, the lowest and highest orientations are 
[001] (£[ 001 ] = 6.42 GPa) and [111] (£ [m] = 53.9 GPa), re¬ 
spectively. In contrast, its shear modulus exhibits an opposite 
trend. The [001] orientation has the highest shear modulus of 
G[ooi] = 24.5 GPa and the [111] one with the lowest value of 
G[in] =3.17 GPa. There is no doubt that their opposite trends 
between both [ 001 ] and [ 111 ] directions substantially con¬ 
tribute to the huge anisotropy of this cubic crystal. Mechan¬ 
ically, the huge anisotropy can be attributed to the electronic 
structures and atomic arrangements. As illustrated in the elec¬ 
tronic localization function (ELF) images (Fig. Ee,f,g)), the 
(001) plane consists of Bi and Na atoms within the ionic¬ 
bonding manner (Fig. E e )X whereas the ( 111 ) plane is indeed 
comprised by the densest metallic Na atoms with pure metal¬ 
lic bonds (Fig. Eg))- It is clear that the dense ( 111 ) plane 
is hard to be compressed, but it can be easily sheared under 
deformation due to the pure metallic bonds. However, for the 
(001) plane, all bonds are ionic Na-Bi bonds with low atomic 
density. This interprets as to why the resistance to the com¬ 
pression of the ( 001 ) plane is low, whereas its shear modulus 
is much higher. Similar interpretation also holds for the (110) 


plane (Fig. [3jf)), from which we can see that both Na-Na 
metallic bonds and Na-Bi ionic bonds co-exist ( c.f and the 
metallic bonds form a pure channel along the < 110 > direc¬ 
tion, Fig. [3j), leading to the intermediate Young’s and shear 

FIG. 3: (Color online) Huge elastic anisotropy of Na^Bi. (a and 
c) The stereographic projections of the Young’s and shear mod¬ 
uli, respectively, (b and d) The representation surfaces for the 
crystallographic-orientation depended Young’s and shear moduli, re¬ 
spectively. (e, f, and g) The electron localization function (ELF) 
isosurface maps for the (001), (110) and (111) planes, respectively. 

Na 3 Bi naturally processes the inverted band ordering, which 
is a prerequisite for the occurrence of topological electronic 
properties. Interestingly, when the SOC is switch on, the in¬ 
verted band ordering is further enhanced. The Na-3,v state (I 'jt 
in Fig. He)) is significantly reduced in energy by increasing 
the energy difference up to 0.74 eV (Fig. 4(c)). Therefore, 
in its strain-free cubic case, cf lO-NaiBi is a TS at 0 GPa, no 
matter whether the spin-orbit coupling effect (SOC) is con¬ 
sidered. Note that this topological semimetal feature of cF 16- 
NagBi remains unchanged up to 3.65 GPa before it transforms 
to a regular insulator 112311 . Certainly, it needs to be empha¬ 
sized that the band inversion at F is caused by the crystal field 
effect via the protection of lattice symmetry, rather than the 
chemical doping, pressure or strains. This feature is similar to 
the famous case of HgTe with a nearly zero direct band gap 
at F point in the BZ and an analogous inverted band ordering 










- 0.5 

- 1.0 










- 0.5 

- 1.0 

rxL r wtxl r w 

In addition to its unusual elastic properties, the cubic cF 16 
phase of Na 3 Bi exhibits another type of attractive electronic 
properties, in different from the ground-state hP24 phase with 
unique feature of 3D TDS. From Fig. Ha), it has been seen 
that the Fermi level exactly crosses the threefold degenerated 
Bi- P( X ,y,z ) states (r^ at I ’ for cF 16-type Na 3 Bi at 0 GPa. If 
the spin-orbit coupling (SOC) effect is included, this threefold 
degenerated F 4 p-states would further split into the doubly de¬ 
generated |/7 3 ) and nondegenerated |pi) states, as shown in 
Fig. He). With this electronic feature, it is clear that in the 
strain-free cubic case Na 3 Bi is a semimetal because its con¬ 
duction and valence bands touch only at the F point. Another 
typical feature is that even in the case without SOC, the Na- 
3s states (T|) are energetically lower by about 0.4 eV than 
the Bi- 6 p states ^ 4 ) at the F point (Fig. 4(a)). More impor¬ 
tantly, T 1 and 1 4 exhibits the opposite parities. However, it is 
worth noting that no any other band inversions present for the 
rest high symmetric points in the BZ. These facts imply that 

FIG. 4: (Color online) Topological phase transition from topological 
semimetal to topological insulator under the C' tetragonal deforma¬ 
tion. Band structures for cubic cF16-type NajBi (a and c) and for its 
distorted structure via the C deformation with a 4% strain (b and d). 
a and b: no SOC inclusion; c and d: with SOC inclusion. The solid 
circles denote the j-like states. 

The doubly degenerated |p 3 ) states crossing the Fermi level 
in Fig. He) can be certainly broken by the engineering of 
strains. Importantly, via the liquid-like C' soft deformation 
of the ( 110 )< 110 > slip system, our calculation demonstrated 
that the cF lh-NatBi can be indeed transformed into a TI from 
its intrinsic feature of a TS. From Fig. Hb and d) the band 
structure at around the Fermi level depends sensitively on the 
lattice distortion along the soft ( 110 )< 110 > tetragonal elas¬ 
tic deformation. Without the SOC inclusion any slight lattice 
distortion along the C' deformation breaks up the triply de¬ 
generated Bi-p( A ViZ) states ^ 4 ) at F into doubly degenerated 
Bi-p VJ and nondegenerated Bi-p, states (see Fig. Hb) with 


a 4% distortion). Furthermore, with the SOC inclusion, the 
doubly degenerated Bi -p xy states at the Fermi level is further 
broken to open a band gap, as evidenced in Fig. |4]d). In the 
meanwhile, such a distortion does not affect its band inversion. 
From Fig. [4] d), the nondegenerated Na-3,v state (T*) is ener¬ 
getically lower by about 0.76 eV than the Bi -p state (TL,) at 
the T point. It needs to be emphasized that for cubic structure 
the product of the parities of the Bloch wave function for the 
occupied bands at time-reversal invariant momenta (TRIMs) 
of three equivalent X (0.5,0,0), three equivalent M (0.5,0.5,0), 
and single R (0.5,0.5,0.5) has been derived to be -1, whereas 
at r it is +1. Via the C' deformation, although that these three 
equivalent momenta of X (or M) can be lifted, the product 
of the parities for all occupied bands at the TRIMs of 1', R, 
X and M still remains -1. Therefore, these results evidence 
that the distorted cubic Na 3 Bi by the strain engineering along 
the C' deformation is a three-dimensional topological insula¬ 
tor. Importantly, because of the reversible liquid-like elastic 
behavior along the C' deformation which almost cost no en¬ 
ergy, the cF 16-type Na 3 Bi becomes a highly attractive com¬ 
pound. Through such a way, one would easily realize rapid 
on/off switching from a TS state in its cubic phase to a TI 
state in its distorted lattice. 

In summary, we have demonstrated that a soft liquid-like 
elastic control of topological phase transition in cubic cF 16- 
type Na 3 Bi can be achieved through the C' tetragonal defor¬ 
mation along the (110)< 110> slip system, highlighting a real¬ 
ization of a fast and reversible on/off switching way between 
topological semimetal and topological insulator. This would 
be beneficial to the quantum electronic devices for practical 

Acknowledgments This work was supported by the ’’Hun¬ 
dred Talents Project” of the Chinese Academy of Sciences 
and by the Key Research Program of Chinese Academy of 
Sciences (Grant No. KGZD-EW-T06) and NSFC of China 
(Grand Numbers: 51074151). The computational resource is 
using the local HPC cluster of the Materials Process Modeling 
Division in the IMR as well as the National Supercomputing 
Center in Tianjin (TH-1A system). 

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